microsemi rf products division 140 commerce drive, montgomeryville pa 18936, (215) 631-9840, fax: (215) 631-9855 page 1 copyright ? 2000 m s c 16 44 . p df 2000-12-20 www. microsemi . com SD1429 rf & microwave transistors p roduct p review rf products division description descriptiondescription description the SD1429 is a 12.5 v class c epitaxial silicon npn planar transistor designed primarily for uhf communications. this device utilizes ?tuned q? technology which consists of an input matching network on the base to achieve optimum gain and broadband characteristics . important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features key features key features key features 470 mhz 12.5 volts common emitter p out = 12 w min. g p = 7.8 db gain applications/benefit applications/benefitapplications/benefit applications/benefits ss s uhf mobile applications absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 36 v v ceo collector-emitter voltage 16 v v ces collector-emitter voltage 36 v v ebo emitter-base voltage 4.0 v i c device current 3.4 a p diss power dissipation 37.5 w t j junction temperature +200 c t stg storage temperature -65 to +150 c thermal data r th(j-c) junction-case thermal resistance 4.6 c/w s s d d 1 1 4 4 2 2 9 9 .500 6lfl (m111) epoxy sealed 4 1 2 3 1. collector 2. emitter 3 . ba se 4. emitter pin connection
microsemi rf products division 140 commerce drive, montgomeryville pa 18936, (215) 631-9840, fax: (215) 631-9855 page 2 copyright ? 2000 m s c 16 44 . p df 2000-12-20 www. microsemi . com SD1429 rf & microwave transistors p roduct p review rf products division static electrical specifications (t case = 25 c) SD1429 symbol test conditions min. typ. max. units bv ces i c = 200 ma v be = 0 v 36 v bv ceo i c = 200 ma i b = 0 ma 16 v bv ebo i e = 4 ma i c = 0 ma 4.0 v i cbo v cb = 15 v i e = 0 ma 2.0 ma h fe v ce = 5 v i c = 500 ma 20 200 dymanic electrical specifications (t case = 25 c) SD1429 symbol test conditions min. typ. max. units p out f = 470 mhz p in = 2 w v ce = 12.5 v 12 w g p f = 470 mhz p in = 2 w v ce = 12.5 v 7.8 db c ob f = 1 mhz v cb = 12 v 50 pf e e l l e e c c t t r r i i c c a a l l s s
microsemi rf products division 140 commerce drive, montgomeryville pa 18936, (215) 631-9840, fax: (215) 631-9855 page 3 copyright ? 2000 m s c 16 44 . p df 2000-12-20 www. microsemi . com SD1429 rf & microwave transistors p roduct p review rf products division p p a a c c k k a a g g e e d d a a t t t t a a
microsemi rf products division 140 commerce drive, montgomeryville pa 18936, (215) 631-9840, fax: (215) 631-9855 page 4 copyright ? 2000 m s c 16 44 . p df 2000-12-20 www. microsemi . com SD1429 rf & microwave transistors p roduct p review rf products division n n o o t t e e s s
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